logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4994400 B1

PDFFull Text
Date of Patent:
Feb. 19, 1991

Filed:

Jan. 27, 1989

Method of fabricating a semiconductor device using a tri-layer structure

Applicant:
Inventors:

Tadanori Yamaguchi, Hillsboro, OR (US);

Yeou-Chong S Yu, San Jose, CA (US);

Carol A Hacherl, Beaverton, OR (US);

Evan E Patton, Portland, OR (US);

Assignee:

Tektronix, Inc., Beaverton, OR (US);

Attorneys:

Winkelman; John D.

Smith-Hill; John

Primary Examiner:

Brian E Hearn

Assistant Examiner:

B Everhart

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 33 ; 437147 ; 437160 ; 437161 ; 437162 ; 357 34 ; 357 59 ; 148D / ; 148D / ;
Abstract

A semiconductor device is made from a body of semiconductor material having a layer of dielectric material and a first layer of conductive material over a main face of the body, the layers each having an opening therein through which an area of the main face of the body of semiconductor material is exposed. A second layer of conductive material is formed over the sides of the opening and the conductor material, whereby the second layer of conductive material is in conductive contact with the first layer of conductive material along the sides of the opening. Material of the second layer of conductive material is removed to a depth such that a portion of the main face of the body of semiconductor material is exposed but a sidewall of conductive material remains along a side of the opening and provides an electrically conductive connection between the first layer of conductive material and the body of the semiconductor material.

Find Patent Forward Citations

Yamaguchi, Tadanori. (1991). Method of fabricating a semiconductor device using a tri-layer structure (U.S. Patent No. 4994400). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4994400

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…