The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 1991

Filed:

May. 08, 1989
Applicant:
Inventors:

Kenichi Aketagawa, Fuchu, JP;

Junro Sakai, Fuchu, JP;

Assignee:

Anelva Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118723 ; 118726 ; 156610 ; 427 35 ; 427 38 ;
Abstract

A vacuum deposition apparatus has a vacuum evaporation chamber provided therein with a dust collector electrode(s) and optionally with an electron beam source. When a DC voltage is applied to the dust collector electrode(s), large polarized dust particles and molecular clusters present in a space in the chamber are attracted to the dust collector electrode(s) by virtue of an electric force given thereto by application of the voltage thereto to enable a deposited film to be formed with a decrease in the number of surface defects thereof. The electron beam source, if present, serves to electrify or ionize only dust particles and molecular clusters having a large scattering cross section. A DC voltage reverse in polarity to that of the dust collector electrode(s) may be applied between a secondary molecular beam source and a substrate, a dopant substance being provided in the secondary molecular beam source to increase the amount of doping of growing crystals.


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