The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 1991

Filed:

Oct. 06, 1989
Applicant:
Inventors:

Sadayuki Okudaira, Ome, JP;

Hiroshi Kawakami, Hachioji, JP;

Tokuo Kure, Tokyo, JP;

Kazunori Tsujimoto, Higashiyamato, JP;

Shinichi Tachi, Sayama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
156643 ; 156653 ; 156662 ; 1566611 ; 437228 ; 2041923 ; 20419232 ;
Abstract

A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.

Published as:
EP0363982A2; JPH02105413A; KR900007066A; EP0363982A3; US4985114A; KR970000417B1; EP0363982B1; DE68927699D1; DE68927699T2; JP2918892B2;

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