The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 1990
Filed:
Sep. 28, 1989
Hideo Yamagishi, Hyogo, JP;
William A Nevin, Hyogo, JP;
Hitoshi Nishio, Hyogo, JP;
Keiko Miki, Hyogo, JP;
Kazunori Tsuge, Hyogo, JP;
Yoshihisa Tawada, Hyogo, JP;
Kanegafuchi Chemical Industry Co., Ltd., Osaka, JP;
Abstract
An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.