The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 1990

Filed:

Jun. 02, 1987
Applicant:
Inventors:

William D Miller, Rio Rancho, NM (US);

Leo N Chapin, Albuquerque, NM (US);

Joseph T Evans, Jr, Albuquerque, NM (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
4271263 ; 252 629 ; 427 96 ; 427162 ; 427226 ; 427240 ; 4273762 ;
Abstract

A method to produce thin films suitable for fabricating ferroelectric thin films. The method provides for selection of the predetermined amounts of lead, lanthanum, zirconium, and titanium precursors which are soluble in different solvents. Dissolving predetermined amounts of the precursors in their respective solvents in proportions such that hydrolyze reaction rate for each metal precursor will be approximately equal. The precursors and solvents are mixed, and water is added to begin a hydrolysis reaction. After the hydrolysis the solution is heated to drive off the excess water and solvent to promote the formation of a sol-gel. The sol-gel is then applied to a thin substrate and sintered to produce the ferroelectric film.


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