The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1990
Filed:
Aug. 04, 1988
Applicant:
Inventors:
Ichiro Nakayama, Kadoma, JP;
Bunji Mizuno, Ikoma, JP;
Masabumi Kubota, Osaka, JP;
Masuo Tanno, Hirakata, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437165 ; 437172 ; 427 38 ; 427 39 ;
Abstract
In a plasma doping process utilizing a radio frequency discharging in a vacuum by for doping an impurity into a semiconductor substrate, the radio frequency discharging is made intermittently and under controlling of average current of the discharging, thereby the impurity concentration is desirably controlled; and especially by selecting the vacuum in a range between 1.times.10.sup.-4 -5.times.10.sup.-2 torr, undesirable deposition of the impurity on the substrate surface is evadable.