The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
May. 26, 1988
Bunji Mizuno, Ikoma, JP;
Masafumi Kubota, Osaka, JP;
Ichiro Nakayama, Kadoma, JP;
Masuo Tanno, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Disclosed is a plasma doping method capable of introducing a large quantity of impurities into a substrate at a relatively low temperature (200.degree. to 600.degree. C.). In the LSI fabrication process represented by Si process, it is necessary to introduce impurities at a properly controlled concentration into desired positions. In this plasma doping method, in order to satisfy this application, the doping temperature may be controlled around 100.degree. C. at high degree of vacuum and by ECR discharge or the like, and a process capable of using a resist mask generally used in the LSI fabrication step and controlling the concentration in a wide range is enabled, so that an extremely shallow impurity profile is realized.