The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 1990

Filed:

Dec. 14, 1988
Applicant:
Inventors:

Benjamin C Hui, Peabody, MA (US);

Ravindra K Kanjolia, North Andover, MA (US);

Jorg Lorberth, Niederweimar, DE;

Assignee:

CVD Incorporated, Woburn, MA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C07F / ; C07F / ;
U.S. Cl.
CPC ...
556 70 ; 556 71 ;
Abstract

A method is provided for highly pure mono- and dialkylarsines, particularly removing substantially all silicon-containing impurities. A mono- or dialkylarsine is reacted with either an alkali metal or an alkali metal hydrocarbyl, thereby producing an alkali metal alkylarsenide. Silicon, germanium, zinc and other metallic impurities are removed from the alkali alkylarsenide. Mono- and dialkylarsine is then regenerated by reaction of the alkali metal alkylarsenide with a proton donor.


Find Patent Forward Citations

Hui, Benjamin. (1990). Chemical process for obtaining high purification of monoalkylarsines and (U.S. Patent No. 4900855). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4900855

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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