The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1990
Filed:
Jan. 20, 1988
Applicant:
Inventors:
Brian R Bennett, Redford, MA (US);
Joseph P Lorenzo, Stow, MA (US);
Kenneth Vaccaro, Medford, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427255 ; 4272553 ;
Abstract
The invention comprises a pyrolytic process for the deposition of high quality silicon dioxide at temperatures of 100.degree.-330.degree. C. Deposition is achieved by reacting silane and oxygen in the 2-12 torr pressure range, yielding deposition rates of 140 .ANG./min at 300.degree. C. and 50 .ANG./min at 120.degree. C. Measurements of refractive index (1.45-1.46), field strength (3-10.times.10.sup.6 V/cm), and resistivity (10.sup.13 -10.sup.15 -cm) indicate that the oxides are near stoichiometric SiO.sub.2. This technology appears promising the Group IV and Group III-V device applications.