The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 1990
Filed:
Apr. 07, 1989
Applicant:
Inventors:
Daniel J Syverson, Robbinsdale, MN (US);
Richard E Novak, Plymouth, MN (US);
Assignee:
FSI International, Inc., Chaska, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156639 ; 134-3 ; 134 33 ; 156640 ; 156646 ; 156657 ; 156345 ;
Abstract
Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.