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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4885614 B1

PDFFull Text
Date of Patent:
Dec. 05, 1989

Filed:

Jul. 08, 1988

Semiconductor device with crystalline silicon-germanium-carbon alloy

Applicant:
Inventors:

Seijiro Furukawa, Kawasaki, JP;

Hiroyuki Etoh, Kokubunji, JP;

Akitoshi Ishizaka, Kokubunji, JP;

Toshikazu Shimada, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Antonelli, Terry & Wands

Primary Examiner:

Andrew J James

Assistant Examiner:

Jerome Jackson

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 16 ; 357-4 ; 357 30 ; 357 61 ; 420556 ;
Abstract

The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.

Find Patent Forward Citations

Furukawa, Seijiro. (1989). Semiconductor device with crystalline silicon-germanium-carbon alloy (U.S. Patent No. 4885614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4885614

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