The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Sep. 01, 1988
Francois G Henley, San Jose, CA (US);
Hee-June Choi, Fremont, CA (US);
Dean J Kratzer, Palo Alto, CA (US);
Maurice R Barr, Saratoga, CA (US);
Photon Dynamics, Inc., San Jose, CA (US);
Abstract
A high-speed test system for semiconductor integrated circuits utilizes electro-optic sampling techniques to perform tests at data rates up to 1.2 Gb/s. The receiver portion of the tester has a 4.5 GHz bandwidth and can perform ECL level functional test with one sampling pulse per vector. A device under test is positioned in a test head with an electro-optic birefringent crystal sensor positioned below the device under test to minimize signal path length. A system control unit includes a Nd: YAG modelocked laser which generates optical pulses, and optical transmission means directs the optical pulses to an array of reflective contacts on the sensor. The sensor functions as a Pockels cell with the electric field in the crystal sensor due to voltages on the array of contacts changing the transmission of polarized light through the crystal. Reflected pulses are received and converted to electrical signals indicative of the voltages on the array of contacts on the electro-optic sensor.