Electron beam test probe for integrated circuit testing

Abstract

An improved electron beam test probe apparatus and a method for use of said apparatus for use in measuring the potential in a specimen which enables measurements to be insensitive to local electric fields in the vicinity of the point at which the potential of the specimen is being measured. The apparatus consists of an electron beam for bombarding the specimen at the point at which the potential of the specimen is to be measured, a magnetic lens for collimating the secondary electrons emitted fom the specimen in response to this bombardment, and a detector system for measuring the energy distribution of the secondary electrons so collimated. Tubular electrodes are employed in the energy distribution detection system. These electrodes have significantly higher field uniformity and intercept a smaller fraction of the secondary electrons than wire mesh electrodes. The electrodes are supported on insulators constructed from slightly conductive plastic which prevent the buildup of static charges which can lead to unpredictable fields. The electron beam used to bombard the specimen is of a substantially lower energy than that used in scanning electron microscopes, thus reducing the problems associated with the high energy electron beam bombardment. Improved electronic delay circuitry which employs a tandem combination of a digital delay technique and an analog delay technique has been developed to allow the electron beam to be turned on in short pulses in precise time synchrony with test signal patterns applied to a circuit being tested. This delay circuitry allows the timing of these short pulses to be specified to an accuracy of 5 picoseconds relative to a trigger pulse which is applied to the delay circuitry several milliseconds earlier. An improved signal averaging circuit has been developed which improves the signal to noise ratio and response time. The apparatus may be used to produce an image of the specimen in the vicinity of the point under bombardment while measuring the potential at said point. The methods taught by the present invention allow the measurement or the potential on buried conductors located beneath an insulating layer. The methods taught also prevent drift in the electron beam resulting from varying surface electric fields on the specimen.