The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
Feb. 17, 1987
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J / ;
U.S. Cl.
CPC ...
250341 ; 250339 ;
Abstract
In a method for predicting a density of micro crystal defects to be generated in a semiconductor element, an infrared absorption spectrum associated with a silicon wafer, which is used for the manufacture of the semiconductor element, is formed by a spectrum forming system. The spectrum has a first oxygen absorption peak at the wavenumber range of 1150 to 1050 cm.sup.-1 and a second oxygen absorption peak at 530 to 500 cm.sup.-1. First and second coefficients indicating oxygen concentrations at the first and second peaks are read by a reading unit. The density of the micro crystal defects are predicted by using a ratio of the first and second coefficients as a monitor.