The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1989
Filed:
Dec. 13, 1988
Takashi Eshita, Inagi, JP;
Fumitake Mieno, Kawasaki, JP;
Yuji Furumura, Kawasaki, JP;
Kikuo Itoh, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A single crystalline silicon carbide (.beta.-SiC) layer having a thickness greater than 1 .mu.m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800.degree. to 1000.degree. C., preferable in a range from 810.degree. to 850.degree. C., whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 .ANG. is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850.degree. to 950.degree. C. In this process, a single crystalline .beta.-SiC layer can be grown on the buffer layer, and a thickness of a few .mu.m for the grown .beta.-SiC layer can be expected.