The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Oct. 27, 1987
Applicant:
Inventors:
Shigeru Honjyo, Kokubunji, JP;
Osamu Minato, Tokyo, JP;
Yoshio Sakai, Kanagawa, JP;
Toshiaki Yamanaka, Hoya, JP;
Katsuhiro Shimohigashi, Tokyo, JP;
Toshiaki Masuhara, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G11C / ;
U.S. Cl.
CPC ...
357 51 ; 357 236 ; 357 29 ; 357 41 ; 357 59 ; 357 71 ; 365154 ;
Abstract
A semiconductor memory device is provided in which an electrode applied with the power supply voltage or the ground voltage is provided on an insulating layer over the drain and/or the gate of the MOS transistors constituting the memory cell of a static memory device, thereby to increasing the capacitance of the storing node of the memory cell. This semiconductor memory device significantly reduces the occurrence of soft errors.