The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Jun. 21, 1988
Applicant:
Inventors:
Cecil J Davis, Greenville, TX (US);
Duane E Carter, Plano, TX (US);
Rhett B Jucha, Celeste, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156345 ; 156646 ;
Abstract
An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.