The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1989
Filed:
Jun. 25, 1987
Applicant:
Inventors:
Thomas C Holloway, Dallas, TX (US);
Roger A Haken, Dallas, TX (US);
Richard A Chapman, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 45 ; 357 2312 ;
Abstract
Polysilicon gate insulated gate field effect transistors with threshold adjustment implants made after the gate oxide (156) and a split of the polysilicon gate (158) have been formed provides a shallow, tight dopant profile.
Holloway, Thomas. (1989). Threshold adjustment method for an igfet (U.S. Patent No. 4845047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4845047
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile