The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1989
Filed:
Aug. 04, 1986
Masaru Takeuchi, Kyoto, JP;
Takeo Fukatsu, Kyoto, JP;
Shoichi Nakano, Osaka, JP;
Yukinori Kuwano, Osaka, JP;
Koji Minami, Osaka, JP;
Masayuki Iwamoto, Hyogo, JP;
Sanyo Electric Co., Ltd., , JP;
Abstract
An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.