The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 1989

Filed:

Jul. 16, 1987
Applicant:
Inventors:

Cecil J Davis, Greenville, TX (US);

Joseph V Abernathy, Wylie, TX (US);

Robert T Matthews, Plano, TX (US);

Randall C Hildenbrand, Richardson, TX (US);

Bruce Simpson, Dallas, TX (US);

James G Bohlman, Forney, TX (US);

Lee M Loewenstein, Plano, TX (US);

John I Jones, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
204298 ; 156345 ; 20419212 ; 118719 ; 414222 ;
Abstract

A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.


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