The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1989
Filed:
Mar. 02, 1988
David C Look, Dayton, OH (US);
Eileen Pimentel, Dayton, OH (US);
Wright State University, Dayton, OH (US);
Abstract
A method and apparatus for measuring the characteristics of a photoconductive semiconductor wafer. The apparatus comprises a light source for directing light of substantially uniform intensity toward one surface of the wafer. The apparatus further comprises masking apparatus, interposed between the wafer and light source, for transmitting the light to the wafer in the shape of a cross formed by a pixel of light at the intersection of the cross and four paths extending outwardly from the pixel to the periphery of the wafer. The apparatus also comprises a first set of contacts for providing an electrical contact with the paths of light. The apparatus further comprises control apparatus connected to each of the contacts of the first set, for applying current successively to each of four sets of adjacent paths of light and measuring the voltage across the opposing set of adjacent paths in response to each application of current. As a result, the resistivity of a first portion of the wafer illuminated by the projection of the pixel of light through the wafer is determined. The apparatus may also comprise a magnet for applying a substantially uniform magnetic field to the other surface of the wafer. As a result, the carrier mobility and carrier concentration of the first portion of the wafer illuminated by the projection of the pixel light are determined.