The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 1989
Filed:
May. 21, 1987
Applicant:
Inventor:
Leslie J Palkuti, Sunnyvale, CA (US);
Assignee:
Advanced Research and Applications Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
3241 / ; 2504922 ; 3241 / ;
Abstract
A method for reliability testing of wafer stage integrated circuit devices wherein a hardness factor is established relating device substrate currents to device lifetimes attributable to interface trap degradation. A beam of ionizing radiation is then directed onto the device until a critical dose is reached, at which time the device fails. The critical dose is plotted against hardness factors so that device lifetimes may be predicted.