The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1989
Filed:
Oct. 30, 1987
Jeffrey R Barber, Pittsburgh, PA (US);
Harish N Kotecha, Manassas, VA (US);
David D Meyer, Oakton, VA (US);
David Stanasolovich, Manassas, VA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the 'bird's beak' region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.