The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1989
Filed:
Nov. 12, 1986
Scott L Jacobs, Chester, VA (US);
Perwaiz Nihal, Hopewell Junction, NY (US);
Burhan Ozmat, Peekskill, NY (US);
Henri D Schnurmann, Monsey, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high speed, high performance integrated circuit packaging structure that may be used for emulating wafer scale integration structures. The preferred embodiment comprises an interposer having a base substrate having alternating insulation and conductive layers thereon, wherein a plurality of the conductive layers are wiring means which are adapted for maintaining an extremely low noise level in the package. The low noise level and low resistance and capacitance of the wiring means allows a plurality of discrete semiconductor segments to be mounted on and interconnected by the integrated circuit package with a significantly reduced number of drivers and receivers than required by Rent's Rule. Each integrated circuit structure of the present invention emulates a large chip or wafer scale integration structure in performance without having to yield the large chip or wafer, and without redundancy schemes. A plurality of these integrated circuit packaging structures are combined by decals to form a central processing unit of a computer or a portion thereof. In an alternate preferred embodiment, the base substrate of the interposer is made of silicon and any required drivers are formed therein, thus substantially eliminating the need for any drivers on each of the discrete semiconductor segments.