The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1989
Filed:
Jun. 30, 1986
Robert D Allen, San Jose, CA (US);
Kaolin N Chiong, Pleasantville, NY (US);
Ming-Fea Chow, Poughquag, NY (US);
Scott A MacDonald, San Jose, CA (US);
Jer-Ming Yang, Yorktown Heights, NY (US);
Carlton G Willson, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention is concerned with methods of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.