The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1989
Filed:
Apr. 30, 1987
Michael L Kerbaugh, Burlington, VT (US);
Charles W Koburger, III, Essex, VT (US);
Jerome B Lasky, Essex Junction, VT (US);
Paul C Parries, Essex Junction, VT (US);
Francis R White, Essex Junction, VT (US);
IBM Corporation, Armonk, NY (US);
Abstract
A method for self-aligning an isolation structure to a diffusion region. A first masking layer is formed on a semiconductor substrate, the first masking layer having at least one aperture sidewall which is substantially perpendicular to the semiconductor substrate. Dopant ions are implanted into the semiconductor substrate through the first masking layer to form a doped region. Sidewall spacers are then defined on the sidewalls of the aperture, and a sidewall image reversal process is carried out such that the sidewall spacers define trench apertures in a masking structure. Finally, isolation trenches are etched into the semiconductor substrate through the masking structure. Alternatively, the implantation step is carried out after the sidewall spacers are defined on the first masking layer.