The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1989
Filed:
Jan. 15, 1987
Daniel L Brors, Fremont, CA (US);
Larry R Lane, San Jose, CA (US);
Mark W Goldsborough, Santa Clara, CA (US);
Jason M Samsel, Milpitas, CA (US);
Max van Mastrigt, San Jose, CA (US);
Robert Foster, San Francisco, CA (US);
Varian Associates, Inc., Palo Alto, CA (US);
Abstract
In a chemical vapor deposition apparatus for coating semiconductor wafers, the wafer is held face down in the reaction chamber. A radiant heat source above the wafer and outside the reaction chamber. The wafer is held on a ring chuck by means of a retractable clamp heats the wafer from its backside to a temperature in excess of 1000.degree. C. rapidly. The radiant heat source includes cylindrical lamps placed in a radial pattern to improve heating uniformity. In the selective tungsten process the temperature of the wafer is raised from ambient to about 600.degree. C. while flowing process gases. At the upper temperature range the heating source can be rapidly cycled on and off to improve the uniformity of coating.