The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1988
Filed:
Jul. 15, 1987
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to the present invention, a method of manufacturing a semiconductor apparatus is provided which comprises the steps of (a) depositing a boron layer on a silicon substrate, and (b) thermally diffusing boron from said boron layer into said silicon substrate. The present invention, which is characteristically based on the solid phase diffusion process, enables even a thin layer to be deposited. Further, unlike the ion implantation process, the present invention enables an impurity to be uniformly diffused even into an inclined plane. Unlike the case where boron-containing glass is used as a diffusion source, the invention enables a sufficient amount of boron to be diffused even at a temperature lower than 1000.degree. C.