The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1988
Filed:
Oct. 05, 1987
Teh-Yi J Chen, Santa Clara, CA (US);
North American Philips Corporation, Signetics Division, Sunnyvale, CA (US);
Abstract
Gate sidewall spacers are created by a two-step procedure in fabricating a field-effect transistor using a protective material such as silicon nitride to prevent gate-electrode oxidation. In the first step, a layer (32) of insulating material is conformally deposited and then substantially removed except for small spacer portions (34) adjoining the sidewalls of a doped non-monocrystalline semiconductor layer (20A) destined to become the gate electrode (36). The second step consists of performing an oxidizing heat treatment to increase the thickness of the spacer portions. No significant gate dielectric encroachment occurs. Also, the spacers achieve a profile that substantially avoids electrical shorts.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile