The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1988
Filed:
Nov. 17, 1986
Applicant:
Inventors:
J B Price, Scottsdale, AZ (US);
Yu C Chow, Tempe, AZ (US);
John Mendonca, Tempe, AZ (US);
Schyi-Yi Wu, Mesa, AZ (US);
Assignee:
Spectrum CVD, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437200 ; 437192 ; 437193 ; 437201 ; 437188 ; 148D / ; 148D / ; 357 71 ;
Abstract
A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed. The bonding layer is preferably less than 50 nm. thick. After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900.degree.-1000.degree. C. for ten minutes or less.