The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1988
Filed:
Jun. 03, 1986
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437190 ; 437189 ; 437195 ; 437196 ; 437200 ; 437201 ;
Abstract
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate on which a first insulation film is formed, forming a first conductive layer on the first insulation film, forming a hillock of the first conductive layer, forming a second insulation film on the structure, removing that portion of the second insulation film, in self-align with the hillock, which is on the hillock, thereby forming a contact hole leading to the first conductive layer, and forming on the structure a second conductive layer extending into the contact hole and contacting the first conductive layer.