The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1987
Filed:
Nov. 06, 1985
Sadayuki Okudaira, Ome, JP;
Shigeru Nishimatsu, Kokubunji, JP;
Keizo Suzuki, Kodaira, JP;
Ken Ninomiya, Hachioji, JP;
Ryoji Hamazaki, Kudamatsu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a method for microwave plasma processing characterized by providing a plasma processing period of time having no radio-frequency voltage applied to the sample stage. Particularly, if the present invention is used for the shaping by etching of the conductive material layer provided on an underlying insulation material, effects such as shortening of processing time and improvement of etching accuracy can be obtained in the case that the radio-frequency voltage is applied only for the period of time for removing the surface oxide film of the portion to be etched, or in the case that the radio-frequency voltage is further applied until nearly the time to initiate over-etching, and, the latter case is also effective for making the side wall of the portion to be etched vertical.