The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1987
Filed:
Nov. 14, 1986
Applicant:
Inventors:
Masayuki Nakajima, Hyogo, JP;
Shinichi Sato, Hyogo, JP;
Akira Tokui, Hyogo, JP;
Akira Kawai, Hyogo, JP;
Masao Nagatomo, Hyogo, JP;
Hiroji Ozaki, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; B44C / ;
U.S. Cl.
CPC ...
156653 ; 156648 ; 156657 ; 357 236 ; 357 72 ; 357 80 ; 437 43 ; 437 52 ;
Abstract
The present invention is a method for fabricating a semiconductor device, wherein impurity is selectively diffused to surround a region (7) of a second conductivity type as a bit line formed on a semiconductor substrate (1), thereby forming an impurity diffused region (9) of a first conductivity type having high density and, by extending the impurity diffused region (9) in the element separating step to form a high density region of the first conductivity type having high density.