The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1987
Filed:
Aug. 20, 1984
Applicant:
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 237 ; 357 71 ;
Abstract
A semiconductor device, and more particularly a technique for forming the substrate thereof, is provided for the purpose of preventing the occurrence of crystal devects during recrystallization. To accomplish this, while the surface of an insulator on which a material to be recrystallized is flattened, a semiconductor layer which is employed for another use, e.g., the interconnection between elements or the gate electrode of a MOS transistor, is disposed in the insulator. Owing to the flattened insulator, the occurrence of the crystal defects in the recrystallization of the material can be prevented.