The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1987
Filed:
Apr. 14, 1986
William M Clark, Jr, Thousand Oaks, CA (US);
Mark W Utlaut, Saugus, CA (US);
Joseph A Wysocki, Oxnard, CA (US);
Edmund K Storms, Los Alamos, NM (US);
Eugene G Szklarz, Los Alamos, NM (US);
Robert G Behrens, Los Alamos, NM (US);
Lynwood W Swanson, McMinnville, OR (US);
Anthony E Bell, McMinnville, OR (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A liquid metal ion source and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source, including an emitter means such as a needle emitter and a source means such as U-shaped heater element, is preferably constructed of rhenium and tungsten, both of which are readily fabricated. The ion sources emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.