The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 1987
Filed:
Apr. 24, 1985
Applicant:
Inventors:
John A Doherty, Sudbury, MA (US);
Billy W Ward, Rockport, MA (US);
David C Shaver, Carlisle, MA (US);
Assignee:
Micrion Limited Partnership, Beverly, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419231 ; 156643 ; 20419234 ; 204298 ; 250251 ; 2503 / ; 250398 ; 250425 ; 250427 ; 2504923 ;
Abstract
An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A beam of electrons directed on the target neutralizes the charge created by the incident ion beam. Imaging of the target surface and ultra-precise control of the etching process is achieved by monitoring the particles that are sputtered from the target surface.