The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1986
Filed:
Dec. 19, 1983
Tamura Masao, Tokorozawa, JP;
Hirotsugu Kozuka, Tokyo, JP;
Yasuo Wada, Tokyo, JP;
Makoto Ohkura, Hachioji, JP;
Tamura Hiroshi, Hachioji, JP;
Takashi Tokuyama, Higashikurume, JP;
Takahiro Okabe, Tokyo, JP;
Osamu Minato, Kodaira, JP;
Shinya Ohba, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.