The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 1986

Filed:

Apr. 23, 1984
Applicant:
Inventors:

Harald Bohlen, Ammerbuch, DE;

Erwin Bretscher, Rapperswil, CH;

Helmut Engelke, Altdorf, DE;

Peter Nehmiz, Stuttgart, DE;

Peter Vettiger, Langnau, CH;

Johann Greschner, Pliezhausen, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F / ; G03C / ;
U.S. Cl.
CPC ...
430 22 ; 430296 ; 430311 ; 430394 ; 430396 ;
Abstract

According to this process two partial patterns which, if superimposed upon each other in a predetermined alignment relative to each other yield the desired pattern, with elements of both partial patterns combining to form elements of the pattern, and these partial pattern elements overlapping sectionally, are projected with a suitable radiation onto the radiation-sensitive layers. Overlapping is achieved in that when designing the two partial patterns a pattern corresponding to the desired pattern is used as a basis in that the elements of this pattern are exposed to a negative windage, the negative windage pattern is subsequently partitioned into two negative windage patterns corresponding to the partial patterns, and finally the negative windage partial pattern elements are exposed to a positive windage to the desired size of the partial pattern elements. The method is used in particular when a pattern is to be transferred by means of hole masks, and if it is necessary, e.g. because the pattern shows annular elements, to use instead of one mask only two complementary masks each comprising at least one part of the pattern.


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