The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1986
Filed:
Mar. 07, 1983
Applicant:
Inventors:
J B Price, Scottsdale, AZ (US);
Philip J Tobin, Scottsdale, AZ (US);
Fabio Pintchovski, Mesa, AZ (US);
Christian A Seelbach, San Jose, CA (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29578 ; 29590 ; 29591 ; 148174 ; 148D / ; 148D / ; 148D / ; 148D / ; 357 231 ; 357 2315 ; 357 65 ; 357 / ; 357 71 ; 427 86 ; 427 88 ; 427 93 ;
Abstract
An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.
Published as:
JPS59177968A; US4570328A;