The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 1985

Filed:

May. 31, 1983
Applicant:
Inventors:

Hisanao Tsuge, Tokyo, JP;

Takayoshi Yoshida, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 63 ; 427 99 ; 4272481 ; 427250 ; 4272554 ; 4272557 ; 156643 ; 156649 ; 156656 ; 1566591 ;
Abstract

A method for producing multi-layered Josephson tunnel barrier devices without an edge step between the layers comprises the steps of forming a first layer containing at least a lower layer superconducting film on a substrate, selectively removing the surface portion of the first layer, except an area where a Josephson tunnel barrier is to be formed, to a predetermined first depth, and forming a first insulating film, preferably by a high-directivity film forming method, on the removed portion of the first layer in such a thickness that the insulating film surface is substantially coplanar with the surface of the retained area of the first layer. A tunnel barrier may be subsequently formed after the third step or in advance following formation of the first layer in the first step, thereby eliminating a change in the characteristics of the tunnel barrier due to the atmosphere. Prevention of edge step is enhanced by forming a lower layer superconducting film on the substrate, patterning the lower layer superconducting film to form a first superconducting electrode, forming a first insulating film having a predetermined thickness over the entire area of the substrate, and selectively removing a surface portion of the first superconducting electrode except a predetermined portion thereof and a surface portion of the first insulating film such that any edge step between the boundary of the first superconducting electrode and the first insulating film is eliminated.


Find Patent Forward Citations

Tsuge, Hisanao. (1985). Method of producing a josephson tunnel barrier (U.S. Patent No. 4548834). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4548834

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…