The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 1985
Filed:
Jul. 27, 1981
Applicant:
Inventors:
Wei-Kan Chu, Poughkeepsie, NY (US);
William A Pliskin, Poughkeepsie, NY (US);
Jacob Riseman, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 82 ; 2957 / ; 156643 ; 427 93 ; 427 95 ; 427240 ; 427 96 ;
Abstract
Deep dielectric isolation zones in a substrate are achieved by forming trenches using reactive ion etching. A glass having a coefficient of thermal expansion closely matching that of the substrate is deposited onto the trench to entirely or partially fill the trench. Deposition can be by sedimentation, centrifugation or spin-on techniques. The structure is then fired until the glass particles fuse into a continuous glass layer and final smoothing if necessary can be accomplished.