The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 1985

Filed:

Oct. 29, 1984
Applicant:
Inventors:

John R Galie, Fishkill, NY (US);

George R Goth, Poughkeepsie, NY (US);

Thomas A Hansen, Poughkeepsie, NY (US);

Robert T Villetto, Jr, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29579 ; 29591 ; 29571 ; 2957 / ; 148D / ; 148D / ; 156643 ; 156650 ; 357 49 ;
Abstract

The present method discloses the steps to form metal device contact studs between regions of a semiconductor device, such as an NPN vertical bipolar transistor, and the first level metal, the studs overlapping both a contact region (such as the base or the collector) and an adjacent polyimide-filled trench. The method is comprised of the following steps:


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