The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 1985
Filed:
Dec. 29, 1983
Applicant:
Inventors:
George R Goth, Poughkeepsie, NY (US);
Thomas A Hansen, Poughkeepsie, NY (US);
Robert T Villetto, Jr, Poughkeepsie, NY (US);
Assignee:
IBM Corporation, Hopewell Junction, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23C / ;
U.S. Cl.
CPC ...
156643 ; 156653 ; 156657 ; 1566611 ; 156662 ; 2041 / ; 427 93 ; 4272553 ;
Abstract
A process for etching deep trenches to achieve dielectric isolation for integrated circuit devices; the process insures obtaining substantially perfectly vertical trench walls by precluding significant variation in etch bias during the trench formation.
Goth, George. (1985). Trench etch process for dielectric isolation (U.S. Patent No. 4534826). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4534826
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile