The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 1985
Filed:
Dec. 23, 1983
Stanford R Ovshinsky, Bloomfield Hills, MI (US);
Stephen J Hudgens, Southfield, MI (US);
Marc A Kastner, Newton Lower Falls, MA (US);
Sovonics Solar Systems, Solon, OH (US);
Abstract
An apparatus and process utilizes microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface. The process results in materials having unique properties suitable for many applications including photovoltaic applications. The process includes the steps of providing at least one source of microwave energy, providing at least two reaction gases, each gas containing at least one alloying element to be deposited onto the receiving surface, and selectively exciting the reaction gases with microwave energy to create excited species containing the alloying elements to be deposited for depositing the alloys in alternating layers onto the receiving surface. For depositing alternating layers of silicon and germanium alloys, the reactions gases can include silane (SiH.sub.4) or silicon tetrafluoride (SiF.sub.4), and germane (GeH.sub.4) or germanium tetrafluoride (GeF.sub.4). In accordance with one disclosed embodiment, the reaction gases are excited separately with the excited species therefrom being sequentially introduced to the receiving surface for layered deposition. In accordance with another disclosed embodiment, the reaction gases are premixed to form a mixture and thereafter, the reaction gases are selectively excited in a plasma which is moved back and forth in the direction of flow of the reaction gas mixture to form selective excited species. Layered deposition results as a consequence of both the selective depletion of one alloying element bearing species from the gas mixture flow and from the motion of the plasma excitation zone relative to the receiving surface.