The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1984
Filed:
Jan. 24, 1984
Applicant:
Inventors:
Lee Chen, Poughkeepsie, NY (US);
Tung J Chuang, Los Gatos, CA (US);
Gangadhara S Mathad, Poughkeepsie, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156345 ; 156635 ; 156646 ; 156656 ; 156664 ; 156666 ; 2191 / ; 427 531 ;
Abstract
Disclosed is a method of etching a metallized substrate by laser radiation. The substrate is exposed to a selected gas which spontaneously reacts with the metal forming a solid reaction product with the metal by a partial consumption of the metal. A beam of radiation of a wavelength suitable for absorption by the reaction product and/or by the metal thereunder is applied in a desired pattern to vaporize the reaction product and thereby selectively etch the metal.