The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1984
Filed:
Mar. 23, 1983
Applicant:
Inventors:
Arthur W Zafiropoulo, Manchester, MA (US);
Joseph A Mayer, Jr, Hamilton, MA (US);
Assignee:
Drytek, Wilmington, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C03C / ; C03C / ; B44C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 1566591 ; 156662 ; 2041 / ; 252 791 ;
Abstract
Method and apparatus for masked etching of a polysilicon surface layer or film to expose a dielectric underlying layer or film on a semiconductor material using ion bombardment from an ionized mixture of a fluorine based gas with a chlorine or bromine containing gas. A particularly useful gas is a mixture of sulfur hexafluoride and Freon 115 gases (C.sub.2 ClF.sub.5). The mixture of gases achieves the result of highly selective etching through the polysilicon film without significantly attacking the underlying dielectric film and without significant undercutting in the polysilicon film or etching of the masking layer.