The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 1984

Filed:

Jun. 30, 1982
Applicant:
Inventors:

Michael J Brady, Brewster, NY (US);

Bernard S Meyerson, Yorktown Heights, NY (US);

John M Warlaumont, Ridgewood, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F24F / ; B05B / ; C23C / ; B32B / ;
U.S. Cl.
CPC ...
430-5 ; 428408 ; 428446 ; 428426 ; 427 65 ; 427160 ; 2041 / ; 2041 / ; 2041 / ; 430967 ;
Abstract

An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375.degree. C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.


Find Patent Forward Citations

Loading…