The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1983
Filed:
Nov. 02, 1981
Applicant:
Inventors:
Richard F Reichelderfer, Castro Valley, CA (US);
Diane C Vogel, Union City, CA (US);
Marian C Tang, Hercules, CA (US);
Assignee:
Branson International Plasma Corporation, Hayward, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156651 ; 1566591 ; 156345 ; 2041 / ; 252 791 ;
Abstract
Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.