The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1982
Filed:
Feb. 23, 1981
Chao-Hsiang Fu, San Jose, CA (US);
Sheau-Ming S Liu, Los Altos, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A process is described for forming a plasma nitride (SiNy) layer and a tapered opening through the layer so that the opening may more readily receive ohmic contacts. During the formation of the plasma nitride layer, more silane (over ammonia) is used to form a silicon rich upper portion of the layer. During the subsequent etching of this layer to form the opening, the silicon rich portion of the plasma nitride layer etches more quickly than the remainder of the layer and this results in the formation of the tapered opening through the layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile