The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1982
Filed:
Jun. 26, 1980
Applicant:
Inventors:
Diane C Vogel, Fremont, CA (US);
Marian C Tang, Rodeo, CA (US);
Richard F Reichelderfer, Castro Valley, CA (US);
Assignee:
Branson International Plasma Corporation, Hayward, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; C03C / ; C03C / ; B44C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156653 ; 156657 ; 1566591 ; 156345 ; 2041 / ; 204298 ; 252 791 ; 427 39 ;
Abstract
Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.
Published as: